issue 1 - october 2007 1 www.zetex.com ? zetex semiconductors plc 2007 ZXTC2062E6 20v, sot23-6, complementary medium power transistors summary bv ceo > 20 (-20)v bv eco > 5 (-4)v i c(cont) = 4 (-3.5)a v ce(sat) < 50 (-65)mv @ 1a r ce(sat) = 35 (54)m p d = 1.1w description advanced process capability has been used to achieve this high performance device. combining npn and pnp transistors in the sot23-6 package provides a compact solution for the intended applications features ? npn-pnp combination very low saturation voltage high gain sot23-6 package applications mosfet and igbt gate driving motor drive ordering information device marking 2062 device reel size (inches) tape width (mm) quantity per reel ZXTC2062E6ta 7 8 3000 c1 e1 b1 c2 e2 b2 c1 b1 c2 e1 top view b2 e2
ZXTC2062E6 issue 1 - october 2007 2 www.zetex.com ? zetex semiconductors plc 2007 absolute maximum and thermal ratings notes: (a) for a device surface mounted on 15mm x 15mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. (c) for a device surface mounted on 50mm x 50mm x 1.6mm fr4 pcb with high coverage of single sided 2oz copper, in still air conditions. (d) as above measured at t<5 seconds. (e) repetitive rating - pulse width limited by maximum junc tion temperature. refer to transient thermal impedance graph. (f) for device with one active die, both collectors attached to a common sink. (g) for device with two active dice running at equal power, split sink 50% to each collector. parameter symbol limit unit collector-base voltage v cbo 100(-25) v collector-emitter voltage v ceo (-)20 v emitter-collector voltage (reverse blocking) v eco 5(-4) v emitter-base voltage v ebo (-)7 v continuous collector current (c)(f) i c 4(-3.5) a peak pulse current i cm (-)10 a base current i b (-)1 a power dissipation at t a =25 c (a)(f) linear derating factor p d 0.7 5.6 w mw/ c power dissipation at t a =25 c (b)(f) linear derating factor p d 0.9 7.2 w mw/ c power dissipation at t a =25 c (b)(g) linear derating factor p d 1.1 8.8 w mw/ c power dissipation at t a =25 c (c)(f) linear derating factor p d 1.1 8.8 w mw/ c power dissipation at t a =25 c (d)(f) linear derating factor p d 1.7 13.6 w mw/ c operating and storage temperature range t j , t stg -55 to +150 c thermal resistance junction to ambient (a)(f) r ja 179 c/w thermal resistance junction to ambient (b)(f) r ja 139 c/w thermal resistance junction to ambient (b)(g) r ja 113 c/w thermal resistance junction to ambient (c)(f) r ja 113 c/w thermal resistance junction to ambient (d)(f) r ja 73 c/w
ZXTC2062E6 issue 1 - october 2007 3 www.zetex.com ? zetex semiconductors plc 2007 thermal characteristics
ZXTC2062E6 issue 1 - october 2007 4 www.zetex.com ? zetex semiconductors plc 2007 electrical characteristics (at tamb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions 100(-25) 140(-55) v i c = (-)100 a collector-emitter breakdown voltage (base open) bv ceo (-)20 35(-45) v i c = (-)10ma (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. ( ) = pnp emitter-base breakdown voltage bv ebo (-)7 (-)8.3 v i e = (-)100 a emitter-collector breakdown voltage (base open) bv eco 5(-4) 6(-8.5) v i e = (-)100 a collector-base cut-off current i cbo <1 (-)50 (-)0.5 na a v cb =100(-25)v v cb =100(-25)v, t amb = 100c emitter-base cut-off current i ebo <1 (-)50 na v eb = (-)5.6v collector-emitter saturation voltage v ce(sat) 40(-55) 60(-100) 95(-185) (-190) 140 50(-65) 75(-135) 115(-280) (-250) 190 mv mv mv mv mv i c = (-)1a, i b = (-)100ma (*) i c = (-)1a, i b = (-)20ma (*) i c = (-)2a, i b = (-)40ma (*) (i c = -3.5a, i b = -175ma) (*) i c = 4a, i b = 200ma (*) base-emitter saturation voltage v be(sat) (-925) 940 (-1000) 1050 mv mv (i c = -3.5a, i b = -175ma (*) ) i c = 4a, i b = 200ma (*) base-emitter turn-on voltage v be(on) (-835) 810 (-900) 900 mv mv (i c = -3.5a, v ce = -2v (*) ) i c = 4a, v ce = 2v (*) static forward current transfer ratio h fe 300(300) 280(170) (65) 140 450(450) 420(300) (100) 210 (15) 15 900(900) i c = (-)10ma, v ce = (-)2v (*) i c = (-)1a, v ce = (-)2v (*) (i c = -3.5a, v ce = -2v (*) ) i c = 4a, v ce = 2v (*) (i c = -10a, v ce = -2v (*) ) i c = 15a, v ce = 2v (*) transition frequency f t 215 (290) mhz i c = (-)50ma, v ce = (-)10v f = 100mhz output capacitance c obo 17(21) 25(30) pf v cb = (-)10v, f = 1mhz (*) delay time t d 68(56) ns v cc = (-)10v. i c = (-)1a, i b1 = -i b2 = (-)10ma. rise time t r 72(68) ns storage time t s 361(158) ns fall time t f 64(59) ns
ZXTC2062E6 issue 1 - october 2007 5 www.zetex.com ? zetex semiconductors plc 2007 npn electrical characteristics 1m 10m 100m 1 10 1m 10m 100m 1 1m 10m 100m 1 10 0.0 0.1 0.2 0.3 0.4 0.5 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 0 100 200 300 400 500 600 700 i c /i b =20 i c /i b =100 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =10 v ce(sat) (v) i c collector current (a) 100c v be(sat) v i c i c /i b =10 150c 25c -55c v ce(sat) (v) i c collector current (a) 150c h fe v i c v ce =2v -55c 25c 100c normalised gain i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c v be(sat) (v) i c collector current (a) 150c v be(on) v i c v ce =2v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe )
ZXTC2062E6 issue 1 - october 2007 6 www.zetex.com ? zetex semiconductors plc 2007 pnp electrical characteristics 1m 10m 100m 1 10 1m 10m 100m 1 1m 10m 100m 1 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 i c /i b =100 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =20 i c /i b =10 - v ce(sat) (v) - i c collector current (a) 100c v be(sat) v i c i c /i b =10 150c 25c -55c - v ce(sat) (v) - i c collector current (a) 150c h fe v i c v ce =2v -55c 25c 100c normalised gain - i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c - v be(sat) (v) - i c collector current (a) 150c v be(on) v i c v ce =2v 100c 25c -55c - v be(on) (v) - i c collector current (a) typical gain (h fe )
ZXTC2062E6 issue 1 - october 2007 7 www.zetex.com ? zetex semiconductors plc 2007 package outline sot23-6 package outline pad latout details note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim millimeters inches min. max. min. max. a 0.90 1.45 0.354 0.0570 a1 0.00 0.15 0.00 0.0059 a2 0.90 1.30 0.0354 0.0511 b 0.35 0.50 0.0078 0.0196 c 0.09 0.26 0.0035 0.0102 d 2.70 3.10 0.1062 0.1220 e 2.20 3.20 0.0866 0.1181 e1 1.30 1.80 0.0511 0.0708 l 0.10 0.60 0.0039 0.0236 e 0.95 ref 0.0374 ref e1 1.90 ref 0.0748 ref l 0 30 0 30 mm inches 0.65 0.026 2.2 0.087 1.06 0.042 0.95 0.037
ZXTC2062E6 issue 1 - october 2007 8 www.zetex.com ? zetex semiconductors plc 2007 zetex sales offices europe zetex gmbh kustermann-park balanstra?e 59 d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com ? 2007 published by zetex semiconductors plc definitions product change zetex semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. customers are solely responsible for obtaining th e latest relevant information before placing orders. applications disclaimer the circuits in this design/application note are offered as desi gn ideas. it is the responsibility of the user to ensure that t he circuit is fit for the user?s application and meets with the user?s requirements. no representation or warranty is given and no liability whatsoev er is assumed by zetex with respect to the accuracy or use of such in formation, or infringement of patents or other intellectual prop erty rights arising from such use or otherwise. zetex does not assume any le gal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restricti on or otherwise) for any damages, loss of profit, business, con tract, opportunity or consequential loss in the use of th ese circuit applications, under any circumstances. life support zetex products are specifically not authorized for use as critic al components in life support devices or systems without the ex press written approval of the chief executive officer of zetex semiconductors plc. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in t he labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devi ce or system whose failure to pe rform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. reproduction the product specifications contained in this publication are issu ed to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the pr oducts or services concerned. terms and conditions all products are sold subjects to zetex? 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future device intended for production at some point. samples may be available ?active? product status recommended for new designs ?last time buy (ltb)? device will be discontinued and last time buy period and delivery is in effect ?not recommended for new designs? device is still in production to support existing designs and production ?obsolete? production ha s been discontinued datasheet status key: ?draft version? this term denotes a very early datasheet ver sion and contains highly provisional information, which may change in any manner without notice. ?provisional version? this term denotes a pre-release datasheet. it provides a clear indication of anticipated performance. however, changes to the test conditions and specif ications may occur, at any time and without notice. ?issue? this term denotes an issued datasheet cont aining finalized specifications. however, changes to specifications may occur, at any time and without notice.
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